NDLI: An inductor-less broadband design technique for transimpedance amplifiers

Content Provider	IEEE Xplore Digital Library
Author	Lu Zhenghao Chen Dandan Yeo Kiat Seng
Copyright Year	2009
Description	Author affiliation: Department of Microelectronics, School of Electronics and Information, Soochow University Suzhou, Jiangsu, China, 215021 (Lu Zhenghao) \|\| School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798 (Chen Dandan; Yeo Kiat Seng)
Abstract	An inductor-less bandwidth enhancement technique for transimpedance amplifiers is proposed in this paper, which uses a single capacitor to realize negative capacitance, capacitive source degeneration and capacitive peaking at the same time. Based on this technique, a broadband transimpedance amplifier is designed and simulated in 0.18µm RFCMOS technology. The simulation results show a bandwidth enhancement ratio of 2.5 is achieved without any inductor employed. The proposed TIA circuit is suitable for 10Gbit/s optical communications and presents the advantages of much less chip area consumption, low-cost and easy of design comparing to inductor based designs.
Starting Page	232
Ending Page	235
File Size	491948
Page Count	4
File Format	PDF
ISBN	9789810824686
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-12-14
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	NANYANG TECHNOLOGICAL UNIV
Subject Keyword	Annealing Broadband Gallium arsenide Pulsed laser deposition Semiconductor diodes III-V semiconductor materials Optical pulses Materials science and technology transimpedance amplifier Broadband amplifiers Semiconductor lasers bandwidth enhancement CMOS technology inductor-less
Content Type	Text
Resource Type	Article

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