NDLI: Implantation-induced defects analysis base on activation energy diagnostics

Content Provider	IEEE Xplore Digital Library
Author	Pengchan, W. Phetchakul, T. Poyai, A.
Copyright Year	2009
Description	Author affiliation: Thai MicroElectronics Center (TMEC), National Electronics and Computer Technology Center, Chachoengsao, Thailand (Poyai, A.) \|\| Department of Electronics, Faculty of Engineering, King Mongkut's Institute of Technology Ladkrabang, Bangkok, Thailand (Pengchan, W.; Phetchakul, T.)
Abstract	Low power consumption device can be realized by low junction leakage current. This leakage current relates to the defects in the depletion region of p-n junction. Among variety process steps, implantation step may generate defects. Therefore, the implantation-induced defects have been studied from the activation energy which has been obtained from the leakage current of p-n junction. The different geometry p-n junctions have been fabricated by a standard CMOS technology. The current-voltage (I-V) and high frequency capacitance-voltage (C-V) characteristics of p-n junctions with temperature dependence have been measured. The electrically active defects from implantation process can be extracted from the junction generation current density versus temperature. Base on this analysis, it will be demonstrated that the implantation-induced defects have been found in p+-n-well more than in n+-p-substrate. Finally, the possible nature of the defect will be discussed.
Starting Page	518
Ending Page	521
File Size	415502
Page Count	4
File Format	PDF
ISBN	9789810824686
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-12-14
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	NANYANG TECHNOLOGICAL UNIV
Subject Keyword	Energy consumption Temperature dependence Capacitance-voltage characteristics Capacitance measurement Geometry implantation defect silicon Current measurement activation energy CMOS technology Frequency Leakage current P-n junctions p-n junction
Content Type	Text
Resource Type	Article

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