NDLI: The reduction of base resistance of SiGe/Si HBT via ion implantation and side-wall oxide self-aligned technique

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The reduction of base resistance of SiGe/Si HBT via ion implantation and side-wall oxide self-aligned technique

Content Provider	IEEE Xplore Digital Library
Author	Chen Xu Jingyan Zhang Lixin Zhao Jun Deng Changbao Tao Guo Gao Jinyu Du Ji Luo Deshu Zou Jianxin Chen Guangdi Shen
Copyright Year	1998
Description	Author affiliation: Dept. of Electron. Eng., Beijing Polytech. Univ., China (Chen Xu)
Abstract	Ion implantation and the side-wall oxide self-aligned technique was used to reduce the extrinsic base resistance of a SiGe HBT. The sheet resistance of the SiGe layer was reduced over 20 times under proper implantation and annealing parameters, and ohmic contacting was also improved. This can greatly enhance the frequency performance and reduce the noise figure of SiGe HBT. The SiGe sheet resistance is sensitive to the implantation and annealing parameters. For our samples an implantation dose of 10/sup 16//cm/sup 3/ and energy of 35 kev, annealing temperature from 960/spl deg/C to 1000/spl deg/C is suitable.
Starting Page	776
Ending Page	779
File Size	202129
Page Count	4
File Format	PDF
ISBN	0780343069
DOI	10.1109/ICSICT.1998.786135
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-10-23
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Ion implantation Frequency Noise figure Noise reduction Contact resistance Doping profiles Annealing
Content Type	Text
Resource Type	Article

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