NDLI: In-situ TEM studies of damage formation under electromigration in Al interconnects

Content Provider	IEEE Xplore Digital Library
Author	Okabayashi, H. Grosjean, D.E. Komatsu, M. Mori, H.
Copyright Year	1998
Description	Author affiliation: R&D Group, NEC Corp., Tsukuba, Japan (Okabayashi, H.)
Abstract	Both depth- and in-plane-resolved information is essential for analysis of electromigration (EM) in layered interconnect lines. We demonstrate the usefulness of a combination of in situ side-view TEM, SEM and EPMA for this purpose. We have analyzed EM in Al-2 wt%Cu bamboo-grain drift lines using these techniques. The analysis leads to the conclusions that large precipitates near the cathode end cause voiding when Ca depletes from them, and that the variation in precipitate sites may be one of the causes of the variation of voiding sites in the cathode area, which have a strong influence on the EM reliability. It was also clarified that Cu that migrated from upstream mostly accumulated at preexisting precipitates at the anode, and no new precipitate formation was observed.
Starting Page	222
Ending Page	225
File Size	299982
Page Count	4
File Format	PDF
ISBN	0780343069
DOI	10.1109/ICSICT.1998.785859
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-10-23
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electromigration Scanning electron microscopy Transmission electron microscopy Cathodes Voltage Electron microscopy National electric code Spatial resolution Temperature control Research and development
Content Type	Text
Resource Type	Article

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