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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Aiguo Yin White, J. Karroy, A. Chun Hu |
| Copyright Year | 1998 |
| Description | Author affiliation: Rockwell Int. Corp., Newport Beach, CA, USA (Aiguo Yin) |
| Abstract | Polycide/metal capacitors with high unit area capacitance and high linearity are successfully integrated into submicron CMOS device fabrication. The capacitor implementation is modular and low cost: the capacitor dielectric is deposited at low temperature and only one additional mask is needed for patterning the capacitor top plate. High voltage-capacitance linearity is obtained for the TEOS oxide capacitors of the capacitance density at 1 fF/spl mu/m/sup 2/, with the linear voltage coefficient of capacitance LVCC <5 ppm/V and the quadratic voltage coefficient of capacitance QVCC<2 ppm/V/sup 2/. For the nitride capacitors, 1.5 fF//spl mu/m/sup 2/ unit area capacitance is obtained with the LVCC <70 ppm/V and the QVCC <20 ppm/V/sup 2/. |
| Starting Page | 131 |
| Ending Page | 134 |
| File Size | 215552 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780343069 |
| DOI | 10.1109/ICSICT.1998.785821 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1998-10-23 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Capacitors Fabrication Capacitance Voltage Dielectric substrates Linearity Temperature Rough surfaces Surface roughness Leakage current |
| Content Type | Text |
| Resource Type | Article |
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