NDLI: Manufacturing process of double-poly CMOS IC for digital-analogue mixed signals

Content Provider	IEEE Xplore Digital Library
Author	Jianfeng Wang Jian Cao Weiming Ga Yongming Shen
Copyright Year	1998
Description	Author affiliation: Inst. of Metall., Acad. Sinica, Shanghai, China (Jianfeng Wang)
Abstract	A double-poly CMOS processing for digital-analogue mixed signal ASIC is discussed in this paper, which is formed on the basis of standard CMOS processing and includes some special devices for digital-analogue mixed signal ASICs, such as polysilicon resistors and double polysilicon capacitors. These polysilicon resistors and polysilicon capacitors are fabricated by a processing compatible with standard CMOS processing and integrated on the CMOS ASIC during the CMOS ASIC manufacturing process. Two layers of LPCVD polysilicon are used in this process. The first layer of polysilicon is used to manufacture the gates for P-channel and N-channel MOS transistors and bottom electrodes of the polysilicon capacitors. After oxidation of the first layer of polysilicon, the second layer of polysilicon is deposited. Two different implantations are implemented on the second layer of polysilicon. One is a large dose of P/sup +/ implantation to form the upper electrode of the poly-silicon capacitor, another is a suitable dose of Si:BF/sub 2//sup +/ implantation to obtain the required resistance value of polysilicon resistors. The characteristics of the polysilicon resistors and double polysilicon capacitors are discussed in this paper, The relationship between the resistance value of polysilicon and the BF/sub 2//sup +/ implantation dose is established.
Starting Page	56
Ending Page	58
File Size	151841
Page Count	3
File Format	PDF
ISBN	0780343069
DOI	10.1109/ICSICT.1998.785787
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-10-23
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Manufacturing processes CMOS process CMOS integrated circuits CMOS digital integrated circuits Resistors Application specific integrated circuits Signal processing MOS capacitors Electrodes MOSFETs
Content Type	Text
Resource Type	Article

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