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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jiang Yanfeng Li Siyuan Li Hairong Meng Xionghui |
| Copyright Year | 1998 |
| Description | Author affiliation: Dept. of Phys., Lanzhou Univ., China (Jiang Yanfeng) |
| Abstract | For BSIT, it is well-known that the ideal relation between the drain current and the drain voltage with respect to the source is pentode-like, the saturated property. But the result from practical measurements shows I/sub D/ increases slightly with rising V/sub D/, just like the phenomenon observed in a BJT, which is affected by "base width modulation". The authors deduce that the main cause is "gate-biasing effect". In this article, the effect is discussed in detail. |
| Starting Page | 160 |
| Ending Page | 162 |
| File Size | 146742 |
| Page Count | 3 |
| File Format | |
| ISBN | 0780343069 |
| DOI | 10.1109/ICSICT.1998.785837 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1998-10-23 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electrons Voltage Plasma sources Current density Epitaxial layers Equations Plasma density Physics Books Boundary conditions |
| Content Type | Text |
| Resource Type | Article |
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