NDLI: The investigation of d.c. magnetron reactively sputtered AlN films applied to GaAs devices passivation

Content Provider	IEEE Xplore Digital Library
Author	Xin Cao Jinsheng Luo Tangsheng Chen Kejin Chen
Copyright Year	1998
Description	Author affiliation: Microelectron. Inst., Xi'an Jiaotong Univ., China (Xin Cao)
Abstract	An AlN film has been deposited by d.c. magnetron reactive sputtering. The stoichiometry, dielectric constant, breakdown strength, density, refractive index and stress of the films were measured. The surface roughness of the AlN film was studied by atomic force microscopy (AFM). The deposition process induced damage of GaAs substrate was also studied. The AlN/GaAs interface was analyzed by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). At the AlN/GaAs interface, the O-Al bond was found and O-Ga or O-As bonds were not found. The AlN film was applied to GaAs power MESFET passivation. The d.c. parameters of the device: BV/sub GD/, loss and V/sub p/ did not change after passivation. The device passivated by AlN also showed good r.f. properties.
Starting Page	696
Ending Page	700
File Size	240148
Page Count	5
File Format	PDF
ISBN	0780343069
DOI	10.1109/ICSICT.1998.786064
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-10-23
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical films Gallium arsenide Atomic force microscopy Spectroscopy Bonding Passivation Sputtering Dielectric constant Dielectric breakdown Refractive index
Content Type	Text
Resource Type	Article

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