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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yangyuan Wang Ruqi Han Xiaoyan Liu Jinfeng Kang |
| Copyright Year | 1998 |
| Description | Author affiliation: Inst. of Microelectron, Peking Univ., Beijing, China (Yangyuan Wang) |
| Abstract | The challenges in further development of Si microelectronics especially MOSFETs into the sub 0.1 /spl mu/m regime in light of fundamental physical effects and practical consideration are discussed. The key issues of physical limitations in Si microelectronics includes: fundamental physical limitations, material limitations, technology limitations, devices limitations, circuits and system limitations. Several potential alternative devices that may takes us to the outermost limitations of Si MOSFET's scaling down, such as single electron devices are introduced. |
| Starting Page | 25 |
| Ending Page | 30 |
| File Size | 447338 |
| Page Count | 6 |
| File Format | |
| ISBN | 0780343069 |
| DOI | 10.1109/ICSICT.1998.785776 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1998-10-23 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Microelectronics Switches Circuits and systems CMOS technology Integrated circuit technology Silicon Thermodynamics Crystalline materials Dielectric materials Semiconductor materials |
| Content Type | Text |
| Resource Type | Article |
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