NDLI: Self-clean process and real time etch rate monitor development for sub-quarter micron device etching

Content Provider	IEEE Xplore Digital Library
Author	Xue-Yu Qian Zhi-Wen Sun Wei-Nan Jiang Grimbergen, M. Lill, T. Yin, G.
Copyright Year	1998
Description	Author affiliation: Appl. Mater., Sunnyvale, CA, USA (Xue-Yu Qian)
Abstract	Advanced sub-quarter micron ULSI plasma etching in production environment has two major requirements. Number one is the ability to accurately control the resulting micro-feature in every aspect. Number two is to produce such results in a cost effective way. In other words, the etching equipment has to run thousands of wafers without interruption such as dry or wet clean, replacement of consumable and other failures. In this paper, we present an innovative interferometer technology for real time etch rate monitoring and the self-clean process development methodology. Self-clean processes eliminate the need for a periodic dry clean to ensure the cleanliness of optical windows and particle free performance. More importantly, the mean wafer between clean (MWBC) with self-clean processes can reach more than 10000 so that the equipment up-time can achieve 95% or more.
Starting Page	87
Ending Page	90
File Size	309820
Page Count	4
File Format	PDF
ISBN	0780343069
DOI	10.1109/ICSICT.1998.785804
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-10-23
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Etching Production Optical interferometry Plasma applications Costs Optical films Plasma devices Condition monitoring Ultra large scale integration Plasma materials processing
Content Type	Text
Resource Type	Article

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