NDLI: The total dose effect on two types of CMOS devices

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Synthesis and analysis of SiGeC

CMOS performance and density trends as we approach 0.1 /spl mu/m

Scenarios of CMOS scaling

Interconnect technology for giga-scale integration

Current status of 300 mm/0.25-0.18 /spl mu/m technologies

The challenges for physical limitations in Si microelectronics

CMOS scaling towards its limits

IC manufacturing options to break the cost/performance bottleneck

VLSI process integration

VLSI interconnect process integration

Advanced interconnect systems for ULSI technology

Novel Ti-SALICIDE process with low resistivity for sub-0.2 /spl mu/m CMOS technology

A 6-level-metal CMOS process for 0.25-0.18 micron foundry manufacturing

Manufacturing process of double-poly CMOS IC for digital-analogue mixed signals

The effect of cobalt salicide on SOI CMOS radiation characteristics

Fabrication and testing of integrated ferroelectric capacitors [non-volatile memories]

JFET/SOS devices: processing and gamma radiation effects

Manufacturing process of bipolar IC with Zener diode

The total dose effect on two types of CMOS devices

The design and program of a practical IC-CAM system

Microcavity engineering using plasma immersion ion implantation

Self-clean process and real time etch rate monitor development for sub-quarter micron device etching

High aspect ratio Si etching technique and application

Plasma damage and contact resistance

Characterisation of low-stress LPCVD silicon nitride in high frequency BJT's with self-aligned metallization

Low-ohmic contacts by excimer laser annealing of implanted polysilicon

Exposure of PMMA with STM under ambient condition

A method to improve field alignment registration accuracy in VLSI lithography

Fundamentals of CMP for IC manufacturing: recent progress

New generation CMP equipment and its Impact on IC devices

Study on ultra-thin gate dielectrics: surface preparation and reliability

The resistance characteristics of the Ni-Cr thin films and their influence on the integrated circuits

Investigation of KOH anisotropic etching of Si <100> wafers for improving etched surface quality

Integration of polycide/metal capacitors in advanced device fabrication

Electrochemical etching used on UHV/CVD epitaxial thin films

The control of pattern distortion and drift in epitaxial layer

Breakthrough to the "Silicon limit" of power devices

290 V high voltage NMOSFET with two different doping level drift regions by compatible 1.5 /spl mu/m CMOS technology

Pattern design optimizing for GAT type power bipolar transistors

A study of EOS failures in power IGBT modules

Theory and simulation of SiGe anode LIGBT

Influence of "gate-biasing effect" on BSIT's saturated property

The influence of temperature on BSIT's turn-off time

The generation and influence of trapped charges in FLOTOX EEPROM tunnel oxide under various erase/write conditions

A deep trench isolation for silicon

High speed low cost BiCMOS for RF applications using profile engineering

Technologies for high performance CMOS active pixel imaging system-on-a-chip

The voltage controlled current bistability (VCCB) in DUBAT

Optimization of MOSFETs with polysilicon-elevated source/drain

Improvement of CMOS/SOS devices characteristics by a modified solid phase epitaxy

An advanced structural deep-submicron MOS device

Electro-chemical deposition technology for ULSI multilevel copper interconnects

Advanced silver metallization for ULSI applications

Metal-polymer interfaces

Integration of CVD W on IMP Ti and TiN

Properties of CVD-W overgrowth on PVD and MOCVD TiN layers

A grain structure based statistical simulation of temperature and current density dependence of electromigration

Wire bonding technique for high temperature applications

In-situ TEM studies of damage formation under electromigration in Al interconnects

The electromigration and reliability of VLSI metallization under temperature gradient conditions

Joule heating effect on evaluation of lifetime in electromigration experiment

A model for electromigration failure distributions of contacts and vias in advanced IC technologies

Diffusion barriers for copper interconnects

Electromigration mechanisms in Cu lines

CVD and PVD transition metal nitrides as diffusion barriers for Cu metallization

Physical properties of semiconducting transition metal silicides and their prospects in Si-based device applications

Multilayer solid phase reaction and epitaxial growth of metal silicide on Si

The influences of stress on the growth of Ti and Ni silicide thin films on [001]Si

The effect of stress and kinetic reaction barriers on the reactive growth of nanometer-sized epitaxial NiSi/sub 2/ islands on Si(111)

The effect of amorphous Si on the epitaxial growth of CoSi/sub 2/ by Co/Si/Ti/Si solid state epitaxy

Si/CoSi/sub 2//Si[100] heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy

Formation and properties of ternary silicide (Co/sub x/Ni/sub 1-x/)Si/sub 2/ thin films

An investigation of single crystal Co-SALICIDE (self-aligned silicide) process for deep sub-micrometer CMOS devices

Silicon nitride gate dielectric for advanced technology

Mobility and oxide breakdown behavior in ultra-thin oxide with atomically smooth interface

Charge-to-breakdown (Q/sub BD/): a method to monitor the ultrathin tunnel oxide in E/sup 2/PROM

Dependence of ultra-thin gate oxide reliability on surface cleaning approach

TDDB characteristics of PETEOS SiO/sub 2/ under pulse stress

A reliability analysis tool of small dimension MOS device based on relaxation spectroscopy technique

Discharging and recharging of anomalous positive charges in MOSFETs

/sup 1/H NMR studies of PECVD a-SiN/sub X/:H

Properties of SOI-SIMNI films

Focused ion beam analysis technology

The recent TEM application development for microelectronics

Sampling methodology for SEM-based defect classification: risk, cost, and benefit analysis

Electrically active defects in surface preamorphized and subsequently RTP-annealed Si and the effect of titanium silicidation

An atomic force microscopy study of thin CoSi/sub 2/ films formed by solid state reaction

Non-destructive characterization of thin silicides using X-ray reflectivity

Combination mechanism of oxygen in heavily Sb-doped CZ silicon

The effect of radiation defects on oxygen diffusion in NTDCZSi

Gettering of metal impurities in silicon by fast neutron irradiation

Full custom CMOS and BiCMOS OPTO-ASICs

Unconstrained handwritten digit VLSI recognition system based on combined neural networks

An ASIC design flow of deep submicron succeeds on first pass

A 2.7 V CMOS IF transceiver for PHS application

Phonetic classification for a novel Mandarin vocoder

A fixed-point DSP implementation for a low bit rate vocoder

Implementation of a low power 128-point FFT

A VLSI design of a pipeline FFT in GF(256)

A new half-flash architecture for high speed video ADC

Analog VLSI parameter fault diagnosis via neural network

Optimization of analog modeling and simulation

Design of a high speed 12-bit subranging A/D converter

A novel switched-current sorter based on magnitude

The design of cascaded resistors in a new analog switch two-step ADC architecture

Current conveyor-based linear transformation active filters

Fault detection for mixed signal ICs by current integration

An analysis of the performance of a new high-speed single-way analog switch

A one-way MOS analog switch

RF modeling issues of deep-submicron MOSFETs for circuit design

An analytic model for asymmetric trapezoidal-gate MOSFET

Proportional difference method for determination of the threshold voltage and the effect inversion carrier mobility of an MOSFET

A new DRAM cell structure with Capacitor-Equiplanar-to-Bitline (CEB) for bitline coupling noise elimination

The influence of tunneling effect and inversion layer quantization effect on deep submicron MOSFET

A new physical I-V model of deep-submicron FD SOI MOSFETs for analogue/digital circuit simulation

Unified deep-submicron MOSFET model for circuit simulation

The development of deep sub micrometer semiconductor device simulation based on the CORBA platform

An unified model to characterize the strong inversion high-frequency capacitance in thin oxide MOS structures under Fowler-Nordheim tunneling injection condition

A new simple method to optimize the parameters of deep-submicron MOSFETs

A new model for EEPROM cell

Multi-level p-channel flash memory

A new approach to the investigation of interconnection delay for multichip models

The comparison of delay modeling for basic interconnect net topologies

Numerical simulation of semiconductor devices considering self-heating effects

Discussion on the low-power CMOS latches and flip-flops

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A simulator for microwave MESFET matrix amplifier

A new approach on power estimation of CMOS sequential logic circuits

Quadru-tree algorithm for transition probability in CMOS IC power estimation

CASH: a novel quadratic placement algorithm for very large standard cell layout design based on clustering

A high speed multiplication-and-accumulation design methodology for submicron and deep submicron DSP solutions

A high speed base library and macro library design methodology for submicron and deep submicron ULSI

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ESD protection circuit in IC card

Methods for reducing soft errors in deep submicron integrated circuits

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The algorithms of inserting boundary-scan circuit automatically

The new equipment for IC testing

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Microelectronic packaging trends: Materials and Processes

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Several reliability related issues for flip-chip packaging

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Advanced cooling technology for leading-edge computer products

Nanocalorimetry measurements of materials having small dimensions

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A novel approach to study patterned thin film local stress for microelectronics application

Self-heating effect in SOI MOSFETs

A novel Drain/Source On Insulator (DSOI) structure to fully suppress the floating-body and self-heating effects

InP-based HEMTs for high speed, low power circuit applications

Novel heterojunction bipolar transistors (HBTs) with significantly reduced emitter current crowding effect

Lead zirconate titanate thin films on GaAs for microwave device applications

Quantum resonant tunneling effect and multi-value logic memory

Nonlinear modeling of 4 W 12 mm multi-cell microwave power GaAs MESFET

AlGaAs/InGaAs PHEMT preamplifier for optical communication systems

Depletion and enhancement mode InP high electron mobility transistors fabricated by a dry gate recess process

Design consideration for planar doped barrier diodes' dc characteristics

Evidence of failure at high temperatures by metal penetration in Al/sub 0.3/Ga/sub 0.22/In/sub 0.48/P/GaAs HBTs

Optical properties of wide bandgap III-V nitride semiconductors

Semiconductor laser amplifier and applications

A numerical analysis for heterojunction phototransistor

The study on the optical properties of GaN detector on the 6H-SiC substrates

High performance InGaAs/InGaAsP strained quantum well lasers with AlGaAs cladding layers

Study of the optical and electrical properties of InGaAs quantum well lasers with carbon doped cladding layer

Highly efficient and ultra-fast visible-blind ultra-violet detectors

Normal incident quantum well infrared photodetectors

Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing

Study and mechanism analysis of photochemical oxidation for n-type mercury cadmium tellurium photoconductance detectors

The analysis of thermal characteristics of the laser diode by transient thermal response method

Spontaneous emission in planar quantum well micro-cavities

An atomic-scale view of semiconductor heterostructures using scanning tunneling microscopy

Effect of deep traps on the low-frequency capacitance-voltage characteristic of selectively doped Al/sub x/Ga/sub 1-x/As/GaAs heterostructures

The influence of interface states on the characteristics of HEMT DC output

Technique and instrument for the characterization of deep traps in GaAs MESFET structures

Iron related emission spectra in InP

Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition

The influence of SI-GaAs crystal property on device characteristic

No-alloy ohmic contact to heavily carbon-doped GaAs

GaAs MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric

Study of electrical and optical properties of InGaN/AlGaN double heterostructure blue light emitting diodes

Improved Bridgman technique for the growth of AgGaSe/sub 2/ single crystals

The investigation of d.c. magnetron reactively sputtered AlN films applied to GaAs devices passivation

Growth of wurtzite GaN films on /spl alpha/-Al/sub 2/O/sub 3/ substrates using light radiation heating metal-organic chemical vapor deposition

Room-temperature continuous-wave lasing from InAs/GaAs quantum dot laser grown by molecular beam epitaxy

GaAs/AlGaAs single quantum well laser with two pairs of linear GRIN-SCH

Strained InGaAs/AlGaAs double quantum well laser with GRIN-SCH

Device physics, performance simulations and measured results of SOI MOS and DTMOS transistors and integrated circuits

SOI material: ready to take over mainstream bulk Si

The investigation of recessed channel SOI devices

A novel analytical physical model for thin film SOI RESURF structure based on 2-D Poisson equation

Design consideration for SOI gate controlled hybrid transistor operating at low voltage

Experimental studies of SOI DTMOSFET for low-voltage low-power applications

Channel design of silicon-on-insulator (SOI) MOSFET for low-voltage low-power application

Speed performance evaluation of SOI CMOS ring oscillators

3-dimensional microelectronic integration

Wafer bonding and smartcut for formation of silicon-on-insulator materials

Hydrogen in silicon: defect interactions and applications

Delamination of thin Si layer in the H/sup +/ implanted Si for the manufacture of SOI Si wafer-fundamental phenomena and the properties of the delaminated Si layers

Nanovoid layer induced by He/sup +/ and H/sup +/ implantation and its gettering effect in SOI wafers

SOI wafer achieved by smart-cut process

Study on the interfacial SiO/sub 2/ layer of silicon wafer direct bonding

A novel Si/sub 1-x/Ge/sub x//Si MOSFET

Simulation of the high frequency performances of a new type of SiGe HBT and fabrication

The reduction of base resistance of SiGe/Si HBT via ion implantation and side-wall oxide self-aligned technique

Carrier freeze-out in strained p-Si/sub 1-x/Ge/sub x/ layers

The influence of punch-through in lowly doped collector on base for npn SiGe base HBTs with high f/sub T/

Critical thickness of Si/sub 0.7/Ge/sub 0.3/ layers in the fabrication of hf SiGe HBTs

Reactive ion etching of Si/sub 1-x/Ge/sub x/ alloy with hydrogen bromide

The study of growth and the properties of C in SiGeC alloy on Si by rapid thermal chemical vapor deposition

Low pressure growth of diamond films under fluorine addition

Electron field emission from SiC/Si heterostructures synthesized by carbon implantation using a MEVVA ion source

Observation and explanation of electron emission from amorphous diamond films

Synthesis of SiC using ion beam and PECVD

A theoretical study of field emission from p-type diamond

Thin film growth conditions for CVD diamond under low pressure

Epitaxial growth of CeO/sub 2/[100] films on Si[100] substrates by dual ion beam reactive sputtering

Design of ZnO/SiO/sub 2//Si monolithic integrated programmable SAW filter

Electronic switching in amorphous silicon devices: properties of the conducting filament

The reliability of amorphous silicon thin film transistors for LCD under DC and AC stresses

Silicon nano-crystals based MOS memory and effects of traps on charge storage characteristics

The improved stability of deuterated amorphous silicon thin film transistor

Progress of flat panel displays

A study of electrical properties on nc-Si/c-Si heterojunction diodes

Parasitic bipolar transistor effect in poly-Si thin film transistor

Electronic structure and properties of novel thermoelectrics from first principles calculations

Heat conduction in low-dimensional structures

Application of the thermoelectric cooler in the seventeenth Chinese retrievable satellite

Potential of Si-based superlattice thermoelectric materials for integration with Si microelectronics

Achievements of China National Climbing Project "micro-electro-mechanical systems, 1994-1998"

MEMS developments in Tsinghua University

Low power polysilicon sources for IR applications

Contactless angle measurement by CMOS process with on chip interface circuit

Computer simulation of polysilicon piezoresistive pressure sensors

The study of single-chip integrated microfluidic system

A new release process in surface micromachining-double mask technology

Design and fabrication for inertial micro sensors

The computer simulation and calculation for the strain distribution of the twin-isles high temperature pressure sensor

Polysilicon piezoresistive pressure sensor and its temperature compensation

Silicon optical information sensors

Laterally capacity sensed accelerometer fabricated with the anodic bonding and the high aspect ratio etching

Technology of double side exposure and bonding for fabrication of accelerometer

Micro electromechanical systems (MEMS): technology and future applications in circuits

Silicon solid-state small satellite design based on IC and MEMS

A novel single-chip fabrication technique for three-dimensional MEMS structures

Mechanically-stable micro assembly using magnetic actuation

An efficient PC-based preferential-etch simulator using dynamic cellular automata method

High-temperature pressure and temperature multi-function sensors

Thermally excited micromechanical vacuum resonator

Discussion on the optical-coupling in silicon optical-type micromechanical sensors

One-dimensional non-contact PSD with high performance

Spin-on dielectric films-a general overview

Proceedings of 4th International Conference on Solid-State and IC Technology

The total dose effect on two types of CMOS devices

Content Provider	IEEE Xplore Digital Library
Author	Zhang Zheng-Xuam Lue Jin-Sheng Yuan Ron-Feng He Bao-Ping Jiang Jing-Ho
Copyright Year	1998
Description	Author affiliation: Xi'an Jiaotong Univ., China (Zhang Zheng-Xuam)
Abstract	In this paper the radiation response of two types of CMOS devices exposed to /sup 60/Co is studied. The two types of CMOS devices were denoted as hardened and unhardened, respectively. Using MOSFET I-V characteristics, threshold-voltage shifts dependence on the radiation dose, voltage shifts due to radiation-induced interface traps and oxide traps dependence on the radiation dose and the density of radiation-induced interface traps dependence on the radiation dose, were analysed under two different dose rates. The dependence of a CMOS inverter's transfer-voltage shifts on radiation dose was analysed also.
Starting Page	74
Ending Page	77
File Size	217642
Page Count	4
File Format	PDF
ISBN	0780343069
DOI	10.1109/ICSICT.1998.785797
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-10-23
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ionizing radiation Threshold voltage CMOS technology Radiation hardening Performance analysis MOS devices MOSFETs Semiconductor films Interface states Temperature dependence
Content Type	Text
Resource Type	Article

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