NDLI: The effect of stress and kinetic reaction barriers on the reactive growth of nanometer-sized epitaxial NiSi/sub 2/ islands on Si(111)

Content Provider	IEEE Xplore Digital Library
Author	Hesse, D. Mattheis, R. Werner, P.
Copyright Year	1998
Description	Author affiliation: Max-Planck-Inst. fur Mikrostructurphys., Halle, Germany (Hesse, D.)
Abstract	Growth kinetics and interface structures of epitaxial, nanometer-sized NiSi/sub 2/ islands of A- and B-orientations on Si(111) single-crystal substrates are studied by RBS, TEM/SAED, and high-resolution TEM on cross sections. The islands grow by an in situ solid state reaction between the silicon substrate and a nickel vapour at temperatures of 300/spl deg/C and 400/spl deg/C. Owing to a crossover of the thermal expansion curves of NiSi/sub 2/ and Si at 400/spl deg/C, stresses determine the shares of (three-dimensional) A-islands and (two-dimensional) B-islands at different temperatures. Furthermore, A-islands contain dislocations, whereas B-islands are completely free from lattice defects, with the exception of interfacial steps of various heights occurring at the NiSi/sub 2//Si(111) growth fronts of both island types. These steps play an essential role in the island growth. The difference in the reaction kinetics observed between A- and B-islands at 400/spl deg/C is explained in terms of different kinetic reaction barriers present at the structurally different NiSi/sub 2/Si(111) growth fronts under the A-and B-islands.
Starting Page	260
Ending Page	263
File Size	305068
Page Count	4
File Format	PDF
ISBN	0780343069
DOI	10.1109/ICSICT.1998.785869
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-10-23
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Kinetic theory Substrates Temperature Thermal stresses Nanostructures Solid state circuits Silicon Nickel Thermal expansion Lattices
Content Type	Text
Resource Type	Article

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