NDLI: A novel Si/sub 1-x/Ge/sub x//Si MOSFET

Content Provider	IEEE Xplore Digital Library
Author	Li Kaicheng Sun Weifeng Zhang Jing Wen Yao Huang Yan d'Avitaya, F.A. Xiangdong Wu Yin Xianwen
Copyright Year	1998
Description	Author affiliation: Nat. Key Lab. of Analog Integrated Circuits, Chongqing, China (Li Kaicheng)
Abstract	A novel Si/sub 1-x/Ge/sub x/ channel Metal Oxide Semiconductor field effect transistor (MOSFET) is described. Si/sub 1-x/Ge/sub x/ alloy used was grown by means of molecular beam epitaxy (MBE). The band structure of the Si/sub 1-x/Ge/sub x/ channel MOSFET is different from that of the silicon channel MOSFET. Because of this, the performance of the former is better than that of the latter. In the present study, 3-inch-diam, N-type, <100> oriented silicon wafers with resistivity of 2 ohm-cm were used. First, Si/sub 1-x/Ge/sub x/ (x=0.1-0.7) layers were grown, with a thickness 0.5-0.8 nm. Then, a silicon buffer layer was grown. After that, a gate oxide layer 15 nm thick was grown at a temperature of 800/spl deg/C. Following polysilicon growth, polysilicon was doped by implantation of phosphorus. The formations of source and drain were by also by implantation. The I-V curves of output with different dopant concentration were obtained. The main direct current parameters of measured Si/sub 1-x/Ge/sub x//Si MOSFET are: the threshold voltage V/sub T/=-1.3 V, the transconductance G/sub m/=100-130 siemens, the breakdown voltage of source and drain is 13-16 V.
Starting Page	768
Ending Page	771
File Size	170727
Page Count	4
File Format	PDF
ISBN	0780343069
DOI	10.1109/ICSICT.1998.786130
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-10-23
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Molecular beam epitaxial growth FETs Germanium alloys Silicon alloys Conductivity Buffer layers Temperature Current measurement Threshold voltage
Content Type	Text
Resource Type	Article

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