NDLI: Highly Chemical Reactive Ion Etching of Silicon in CF4 Containing Plasmas

Content Provider	IEEE Xplore Digital Library
Author	Rosli, S.A. Aziz, A.A. Hamid, H.A.
Copyright Year	2006
Description	Author affiliation: Univ. Sains Malaysia, Pinang (Rosli, S.A.; Aziz, A.A.; Hamid, H.A.)
Abstract	Silicon (Si) etching process with low temperature is used for initial processing of semiconductor field emitter array cathodes for vacuum microelectronics, for optical reflecting gratings, for opto- and micromechanical devices. Most of them are performed by dry etching process especially in reactive ion etching (RIE) method with fluorocarbon-gases such as $CF_{4},$ $CHF_{3}$ and $C_{3}F_{8}.$ In this work, results are shown that reactive ion etching of silicon using $CF_{4}/H_{2}$ is capable at meeting the requirement (anisotropy, high etch rate and high selectivity, simultaneously) similar to that by using reactive ion etching with fluorine-containing plasma. We have investigated the etching rate dependency on the percentage of hydrogen in the gas mixture, the total pressure and flow gas and found that by using a gas mixture with 33% of $H_{2},$ the optimum rate of Si is achieved. The etch rate are found to increase with voltage, attaining a maximum rate 1780 A/min at -482V. Surface morphology of the etched samples is characterized by scanning electron microscopy and atomic force microscopy. The results revealed that the etched surface was anisotropic and the smoothness of the etched surface is comparable to that of polished wafer.
Starting Page	856
Ending Page	860
File Size	2261448
Page Count	5
File Format	PDF
ISBN	0780397304
DOI	10.1109/SMELEC.2006.380759
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-29
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Chemicals Silicon Plasma applications Plasma chemistry Surface morphology Atomic force microscopy Plasma temperature Optical arrays Dry etching Anisotropic magnetoresistance
Content Type	Text
Resource Type	Article

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