NDLI: Softbake and Post-exposure Bake Optimization for Process Window Improvement and Optical Proximity Effect Tuning

Content Provider	IEEE Xplore Digital Library
Author	Liau, C.Y. Yet, E.K. Lee, C.H. Tan, I. Loo, C. Lee, B.C. Ng, Y.K. Sheu, W.B.
Copyright Year	2006
Description	Author affiliation: X-FAB Sarawak Sdn. Bhd., Kuching (Liau, C.Y.; Yet, E.K.; Lee, C.H.; Tan, I.; Loo, C.; Lee, B.C.; Ng, Y.K.; Sheu, W.B.)
Abstract	We have shown that process effects induced by extending the softbake (SB) and post-exposure bake (PEB) temperature in the process flow of chemically amplified photoresists can lead to significant improvements in depth-of-focus (DOF) and exposure latitude (EL) and small geometry printing capability (resolution). Through careful optimization of SB and PEB temperature, dense line and space structures of 160 nm and below can be printed with substantially big process margin, using binary masks and 248 nm lithography under the half annular illumination mode. Besides, we have also shown that the optical proximity effect, namely the non-linearity, proximity bias and line-end shortening in specific is tunable by changing the SB and PEB temperatures. The main objective of this study is to demonstrate how, using 248 nm lithography with binary masks and with a moderate resolution enhancement technique (RET); the process latitude can be improved besides minimizing the impact from optical proximity effect.
Starting Page	447
Ending Page	453
File Size	1589013
Page Count	7
File Format	PDF
ISBN	0780397304
DOI	10.1109/SMELEC.2006.381101
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-29
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Proximity effect Optical tuning Temperature Lithography Stimulated emission Chemical processes Resists Lead Geometrical optics Printing
Content Type	Text
Resource Type	Article

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