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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Avram, M. Avram, A. Comanescu, F. Popescu, A.M. Voitincu, C. |
| Copyright Year | 2009 |
| Description | Author affiliation: National Institute for Research and Development in Microtechnologies, Romania, Bucharest (Avram, M.; Avram, A.; Comanescu, F.; Popescu, A.M.; Voitincu, C.) |
| Abstract | This paper presents the authors' understanding of the mechanistic aspects of the role of energetic ion bombardment in low density plasma reactive ion etching (RIE). The phenomenon of ion assisted gas surface chemistry is described and the importance of this phenomenon in obtaining anisotropic is emphasized. It was studied the dependence of etching rate of RF power and pressure in reactor. RF power and pressure in the reactor has significant effect not only on the etching rate, but also on the degree of anisotropy and etching profiles for various RF power and pressure in the reactor. |
| Starting Page | 253 |
| Ending Page | 256 |
| File Size | 768443 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424444137 |
| ISSN | 1545827X |
| DOI | 10.1109/SMICND.2009.5336554 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-10-12 |
| Publisher Place | romania |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Plasma applications Plasma chemistry Hydrogen Dry etching Radio frequency Inductors Chemicals Hafnium Anisotropic magnetoresistance Plasma accelerators nanoscale patterning reactive ion etching |
| Content Type | Text |
| Resource Type | Article |
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