NDLI: Self Heating Characterization of 32V MOSFETs using Pulsed Gate Measurement

Content Provider	IEEE Xplore Digital Library
Author	Rahim, A.F.A. Kordesch, A.V. Yusof, Y.M.
Copyright Year	2006
Description	Author affiliation: Silterra Malaysia Sdn Bhd, Kulim (Rahim, A.F.A.; Kordesch, A.V.)
Abstract	High voltage (HV) MOSFETs are extremely interesting for automotive, medical ultra-sound, flat panel LCD displays, RF and many other applications. One of the key phenomena related to the operation of HV devices is the self heating effect (SHE). Intuitively SHE represents the heating of the device due to its internal power dissipation. SHE results in a reduction of the drain current and the negative output conductance effect. In this work we measure the self heating effect of 32 V MOSFETs fabricated in Silterra's 180 nm HV CMOS process technology. We extract the equivalent thermal impedance of the device (thermal resistance, $R_{TH}$ and capacitance, $C_{TH}).$ These parameters are needed for circuit simulation for circuit design. A pulsed gate measurement is used in order to be able to measure the device characteristics when it is still "cold." The pulse width is typically 2 mus. The influence of pulse duration is analyzed.
Starting Page	361
Ending Page	366
File Size	2344308
Page Count	6
File Format	PDF
ISBN	0780397304
DOI	10.1109/SMELEC.2006.381082
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-29
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Pulse measurements Heating MOSFETs Electrical resistance measurement Thermal resistance Voltage Automotive engineering Flat panel displays Liquid crystal displays Radio frequency
Content Type	Text
Resource Type	Article

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