NDLI: Photopthermal Study of Ceramic ZnO Doped with Y2O3

Content Provider	IEEE Xplore Digital Library
Author	Zakaria, A. Rizwan, Z. Hashim, M. Shaari, A.H. Yunus, W.M.M.
Copyright Year	2006
Description	Author affiliation: Univ. Putra Malaysia, Serdang (Zakaria, A.; Rizwan, Z.; Hashim, M.; Shaari, A.H.; Yunus, W.M.M.)
Abstract	A powerful tool, photopyroelectric spectroscopy, for examining the optical properties as non-radiative recombination for the semiconductor materials is used for the $Y_{2}O_{3}$ doped ZnO ceramics. The ceramic (ZnO-x, x=0.4-1.6 mol% of $Y_{2}O_{3})$ was sintered at isothermal temperature, 1175 and 1275degC for 1 hour to investigate its optical properties. The PPE spectroscopy is used to study the energy band-gap of the ceramic. The wavelength of incident light, modulated at 9 Hz, is kept in the range of 300 to 800 nm and the photopyroelectric spectrum with reference to the doping level is discussed. The band-gap energy is estimated from the plot $(phv)^{2}$ vs hv and is about constant at 2.82 eV for the samples sintered at 1275degC at all doping levels of $Y_{2}O_{3}.$ The energy band-gap decreases from 2.88 to 2.82 eV with the decrease of $Y_{2}O_{3}$ mol% at the sintering temperature of 1175degC. The steepness factor $sigma_{A}$ (in A region) and $sigma_{B}$ (in B region) which characterizes the slop of exponential optical absorption is discussed with reference to the doping level of $Y_{2}O_{3}.$ The X-ray diffractrometry shows that the crystal structure of ZnO doped with different mol% of $Y_{2}O_{3}$ remains to be of hexagonal type and the secondary phase is Yttrium-rich. Microstructure and compositional analysis of the selected areas are analyzed using SEM and EDAX which shows the Yttrium-rich phase coexist in the grain boundaries and nodal points. The relative density is decreased with the increase of $Y_{2}O_{3}$ mol% indicating the increase in porosity. The grain size decreases with the increase of $Y_{2}O_{3}$ mol% which shows that $Y_{2}O_{3}$ acts as a grain inhibitor.
Starting Page	397
Ending Page	401
File Size	2224049
Page Count	5
File Format	PDF
ISBN	0780397304
DOI	10.1109/SMELEC.2006.381089
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-29
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ceramics Zinc oxide Photonic band gap Doping Spectroscopy Temperature Optical modulation Yttrium Radiative recombination Semiconductor materials
Content Type	Text
Resource Type	Article

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