NDLI: Process Optimization of p+LDD in 130nm Process Technology using TCAD Simulation

Content Provider	IEEE Xplore Digital Library
Author	Majid, H.N.A. Muhamad, M.R. Victor Kordesch, A. Chew Soon Aika
Copyright Year	2006
Description	Author affiliation: Silterra (M) Sdn Bhd, Kulim (Majid, H.N.A.)
Abstract	The objective of this work is to study the effect of pMOSFETs lightly doped drain (p+LDD) using two different species of dopants; boron and boron di-flouride using TCAD Simulation. The result from this simulation was compared with electrical measurements on silicon wafers. In our experiments, we used the same dose for both of the dopants, at dose A. We only systematically split the energy for BF2 into three splits. 2D simulation results using TSUPREM-4 and MEDICI help us to understand the mechanism involved. Our results show improvement for the junction profile by comparing BF2 and boron. It has been reported before, that incorporating fluorine from BF2 dopant is very useful for the shallow junction devices (J.R. Pfiester et al., 1990). This beneficial effect of a BF2 p+LDD will make improvement on the device performance. Since the experiment is comparing the simulation data with the experimental data, it will be very useful for the process engineer to tune their process implant parameters for a future technology.
Starting Page	493
Ending Page	497
File Size	1660123
Page Count	5
File Format	PDF
ISBN	0780397304
DOI	10.1109/SMELEC.2006.381111
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-29
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Medical simulation Circuit simulation Boron Implants Silicon Fabrication Circuit testing Data mining MOSFETs Physics
Content Type	Text
Resource Type	Article

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