NDLI: Error Correction Code Multi-Switch Junction Crossbar Nanomemory Demultiplexer: Performance and Reliability Analysis

Content Provider	IEEE Xplore Digital Library
Author	Coker, A. Taylor, V.
Copyright Year	2008
Abstract	In this work, the performance and reliability analysis of a crossbar molecular switch nanomemory demultiplexer is studied and results presented. In particular, we investigate the impact on the performance of a crossbar nanomemory demultiplexer of implementing a combination of error correction coding and multi-switch junction fault tolerance schemes. Results indicate that delay and power scale linearly with increasing number of redundant molecular switch junctions. Results also show that by implementing a redundancy of k = 3 and error correction code Hamming distance d = 2, the demultiplexer reliability can be improved to approximately 99% when there is a 20% probability of errors occurring in the demultiplexer. If the Hamming distance is increased to d = 3, then a 30% error rate occurrence can be tolerated. The results of the access time delay analysis also indicate an improvement with respect to increasing redundancy and Hamming distance. Power dissipation penalties were shown to be relatively small when compared with reliability gains.
Starting Page	907
Ending Page	910
File Size	171925
Page Count	4
File Format	PDF
ISBN	9781424421039
DOI	10.1109/NANO.2008.271
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-08-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Reliability Error correction codes Redundancy Mathematical model Junctions Switches Hamming distance
Content Type	Text
Resource Type	Article

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