NDLI: Optimal Control over the InAs Nanowire Growth for System Integration and their Structural and Transport Properties

Content Provider	IEEE Xplore Digital Library
Author	Dayeh, S.A. Susac, D. Peng Chen Yi Jing Kavanagh, K.L. Lau, S.S. Yu, E.T. Deli Wang
Copyright Year	2008
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Univ. of California-San Diego, La Jolla, CA (Dayeh, S.A.)
Abstract	We present new fundamental insights into the nucleation and evolution of InAs nanowires (NWs) grown using organo-metallic vapor-phase epitaxy (OMVPE), the correlation of their room temperature transport behavior with their structural properties, and a novel scheme for their integration to Si substrates. We experimentally distinguish, for the first time, two NW growth regimes defined by the direction of In adatom exchange between the NW (InAs) and the substrate (InAs (lll)B). This understanding leads to optimal control over the NW morphology over length scales of the order of the In adatom surface diffusion length on the NW sidewalls. Transmission electron microscopy (TEM) analysis of the NW crystal structure of wurtzite (WZ) and zincblende (ZB) NWs is used to explain striking differences in their transport behavior. We find that the presence of small ZB sections in the WZ NWs can create spontaneous polarization sheet charges at each section interface along the NW channel, leading to improved subthreshold characteristics over those of pure ZB NWs, as observed in our electrical device measurements. Finally, we successfully demonstrate the vertical integration of electrically isolated InAs NWs on $SiO_{2}$ on Si suitable for implementing 3D NW circuits using the bottom-up synthesis approach for practical integration of III-V functional devices to Si technology.
Starting Page	576
Ending Page	579
File Size	851739
Page Count	4
File Format	PDF
ISBN	9781424421039
DOI	10.1109/NANO.2008.170
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-08-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Substrates Silicon Surface morphology FETs Gold Optimal control Correlation
Content Type	Text
Resource Type	Article

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