NDLI: Thermoelectric Properties of Silicon Nanowires

Content Provider	IEEE Xplore Digital Library
Author	Ramayya, E.B. Vasileska, D. Goodnick, S.M. Knezevic, I.
Copyright Year	2008
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI (Ramayya, E.B.; Knezevic, I.)
Abstract	The thermoelectric figure of merit (ZT) of gated silicon nanowires with square cross section has been calculated by solving the Boltzmann transport equations for electrons and phonons. The electrical conductivity, electronic Seebeck coefficient, and electronic thermal conductivity were calculated by including electron scattering from confined acoustic phonons, intervalley phonons and imperfections at the $Si/SiO_{2}$ interface. Three-phonon scattering and boundary scattering were included in the calculation of the lattice thermal conductivity. The Seebeck coefficient, electrical conductivity, and thermal conductivity vary non-monotonically with the variation of the wire cross section mainly because of the non-uniform variation of the electron mobility with the wire cross section. In particular, when the wire cross section is decreased from 8 x 8 $nm^{2}$ to 3 x 3 $nm^{2},$ ZT increases initially, reaches a maximum value ZT = 0.11 for a 5 x 5 $nm^{2}$ wire, and then decreases with further reduction of the wire cross section.
Starting Page	339
Ending Page	342
File Size	132609
Page Count	4
File Format	PDF
ISBN	9781424421039
DOI	10.1109/NANO.2008.106
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-08-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Phonons Wire Silicon Scattering Conductivity Nanowires Acoustics
Content Type	Text
Resource Type	Article

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