NDLI: Infrared Detection Using Carbon Nanotube Field Effect Transistor

Content Provider	IEEE Xplore Digital Library
Author	Hongzhi Chen Ning Xi King Wai-Chiu Lai Jiangbo Zhang
Copyright Year	2008
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI (Hongzhi Chen; Ning Xi; King Wai-Chiu Lai; Jiangbo Zhang)
Abstract	Carbon nanotube (CNT) based infrared (IR) detectors have been reported and shown promising properties taking advantage of its one dimensional structure and unique electrical properties. The CNT photodiodes detect IR signal through Schottky barriers that are formed when metal and semiconductor CNT come into contact due to the difference of the energy levels. However, the generated photocurrent was small due to the structure of the CNT photodiodes, consisting of two reversely connected Schottky diodes. In addition, the mechanism of the Schottky barriers of these photodiodes were not well understood. In this paper, a CNT Field Effect Transistor (CNTFET) is designed and used as an IR detector, improving the performance by tuning the doping level of the CNT through the gate.By introducing the gate as in CNTFET to the photodiodes, the Fermi levels of the CNTs are able to be adjusted by the electrostatic doping, as a result the dark currents of CNT photodiodes can be screened. On the other hand, the photocurrent is determined by the capability of Schottky barriers to separated photogenerated electron and hole pairs, thus gate can shift the Fermi level of a CNT to the most sensitive level in order to produce a maximum photocurrent. The test results from the proposed CNTFET IR detectors provided a better understanding of its working principle in order to inspire optimal design of a CNT photodetector. The experimental results showed the photocurrent was proportional to the depletion width of Schottky barriers.
Starting Page	88
Ending Page	91
File Size	219883
Page Count	4
File Format	PDF
ISBN	9781424421039
DOI	10.1109/NANO.2008.33
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-08-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Detectors Photoconductivity CNTFETs Schottky barriers Dark current Photodiodes
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in