NDLI: Zinc Oxide Nanowire Networks for Macroelectronic Devices

Content Provider	IEEE Xplore Digital Library
Author	Unalan, H.E. Yan Zhang Hiralal, P. Dalal, S. Kuo, D. Milne, W.I. Amaratunga, G.A.J.
Copyright Year	2008
Description	Author affiliation: Dept. of Eng., Univ. of Cambridge, Cambridge (Unalan, H.E.; Yan Zhang; Hiralal, P.; Dalal, S.; Kuo, D.; Milne, W.I.; Amaratunga, G.A.J.)
Abstract	Zinc oxide (ZnO) nanowire networks have been proposed as an alternative to organic and amorphous semiconductors for plastic electronics. Although the mobility of the ZnO networks is lower than that of individual nanowires, they offer the advantages of high transparency and flexibility. A major drawback of using individual nanowires in nano or microelectronic applications is the lack of a manufacturable process to precisely assemble nanowires into small devices. The use of ZnO networks avoid this issue for relatively large area macroelectronic devices since the devices exhibit the average properties of a large number of random individual nanowires. In this work, we have deposited uniform ZnO thin films using an easy, scalable, stamping method and characterized their electronic and optoelectronic properties. We have also demonstrated the use of ZnO networks as an active material in thin film transistors where mobility values in excess of 20 $cm^{2}/Vs$ has been achieved. The results presented here simply reveal the potential use of inorganic nanowires for optoelectronic devices.
Starting Page	561
Ending Page	564
File Size	466623
Page Count	4
File Format	PDF
ISBN	9781424421039
DOI	10.1109/NANO.2008.166
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-08-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Zinc oxide Nanoscale devices Substrates Thin film transistors Silicon Electrodes Optoelectronic devices
Content Type	Text
Resource Type	Article

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