NDLI: Micro Regular Octahedron and Truncated Octahedron Cavities on 111 Oriented Silicon Wafer

Content Provider	IEEE Xplore Digital Library
Author	Hui Ju Wenkui Wang
Copyright Year	2008
Description	Author affiliation: Dept. of Electr. Eng. & Comput. Sci., Nagoya Univ., Nagoya (Hui Ju)
Abstract	Octahedron cavities fabricated on <111>-oriented silicon wafer combining with the dry etching of reactive ion etching-inductively coupled plasma (RIE-ICP) and the wet etching of ethylene diamine, pyrocatechol, and water (EDP/EPW) were investigated. The etching characteristics are analyzed depending on different etching conditions, and regular or irregular octahedron cavities can be obtained by self etch stop of smooth {111} crystalline planes. RIE-ICP etching is used to define the depth of cavities, and EDP etching is followed for removing the roughness. The final self-etch-stop profiles of cavities are determined by the dimension of mask patterns, aligning direction and the depth of cavities in the wafer. The results of etched cavities confirmed the condition to determine the final etching profiles.
Starting Page	878
Ending Page	879
File Size	244054
Page Count	2
File Format	PDF
ISBN	9781424421039
DOI	10.1109/NANO.2008.262
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-08-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Cavity resonators Etching Silicon Surface treatment Crystals Fabrication Polymers
Content Type	Text
Resource Type	Article

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Micro Regular Octahedron and Truncated Octahedron Cavities on 111 Oriented Silicon Wafer