NDLI: Fast lithographic mask optimization considering process variation

Content Provider	IEEE Xplore Digital Library
Author	Yu-Hsuan Su Yu-Chen Huang Liang-Chun Tsai Yao-Wen Chang Banerjee, S.
Copyright Year	2014
Description	Author affiliation: Samsung Accel., New York, NY, USA (Banerjee, S.) \|\| Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan (Yu-Hsuan Su; Yu-Chen Huang; Yao-Wen Chang) \|\| Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan (Liang-Chun Tsai)
Abstract	As nanometer technology advances, conventional OPC (Optical Proximity Correction) that minimizes the EPE (Edge Placement Error) at the nominal corner alone often leads to poor process window. To improve the mask printability across various process corners, process-window OPC optimizes EPE for multiple process corners, but often suffers long runtime, due to repeated lithographic simulations. This paper presents an efficient process-variation-aware mask optimization framework, namely PVOPC (Process-Variation OPC), to simultaneously minimize EPE and PV (Process-Variation) band with fast convergence. The PVOPC framework includes EPE-sensitivity-driven dynamic fragmentation, process-variation-aware EPE modeling, and post correction with three new EPE-converging techniques and a systematic sub-resolution assisted feature insertion algorithm. Experimental results show that our approach efficiently achieves high-quality EPE and PV band results.
Starting Page	230
Ending Page	237
File Size	1736203
Page Count	8
File Format	PDF
ISBN	9781479962785
DOI	10.1109/ICCAD.2014.7001357
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-11-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Image segmentation Layout Optimization Process control Convergence Systematics Lithography
Content Type	Text
Resource Type	Article

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