NDLI: A 2.4 GHz Fully Integrated Class-A Power Ampifier In 0.35μm SiGe BiCMOS Technology

Content Provider	IEEE Xplore Digital Library
Author	Wang, A. Xiaokang Guan Haigang Feng Qu Wu Rouying Zhan Li-Wu Yang
Copyright Year	2005
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL (Wang, A.; Xiaokang Guan; Haigang Feng; Qu Wu; Rouying Zhan; Li-Wu Yang)
Abstract	This paper presents a 2.4 GHz fully integrated class-A power amplifier designed and implemented in a commercial 0.35 mum SiGe BiCMOS technology for a single-chip dual-band transceiver. It delivers a power output of 18.5dBm at an input power of -8dBm with a PAE of 17%. The 2nd and 3rd harmonics are -37.5dBc and -32.2dBc, respectively. The power amplifier draws a DC current of 126mA from a 3.3 V supply and achieves a linear gain of 27.6 dB. The fabricated die size is only 1.2 mm times 1 mm. An improved PA model is introduced for optimal power matching analysis that was verified in this design
Starting Page	360
Ending Page	363
File Size	1057455
Page Count	4
File Format	PDF
ISBN	0780392108
DOI	10.1109/ICASIC.2005.1611325
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-24
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon germanium Germanium silicon alloys BiCMOS integrated circuits Power amplifiers Radio frequency Radiofrequency amplifiers Power generation Voltage Heterojunction bipolar transistors Transceivers
Content Type	Text
Resource Type	Article

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A 2.4 GHz Fully Integrated Class-A Power Ampifier In 0.35&#956;m SiGe BiCMOS Technology

A 2.4 GHz Fully Integrated Class-A Power Ampifier In 0.35μm SiGe BiCMOS Technology