NDLI: Observation of Intermediate States in Magnetic Tunnel Junctions With Composite Free Layer

Content Provider	IEEE Xplore Digital Library
Author	Xiaofeng Yao Malmhall, R. Ranjan, R. Jian-Ping Wang
Copyright Year	1965
Abstract	The current-induced magnetization switching was studied in the MTJ devices with composite free layer (CoFeB/CoFeB-oxide/CoFeB). The stable intermediate state was observed due to the multi-domain structure induced by the dipole field and large device size. Two different stable intermediate states were observed in different applied current direction. The switching mechanisms of those two intermediate states are different, which is also indicated by the switching current distribution. Reversible intermediate state was also observed at low applied current, which may be due to the domain nucleation.
Sponsorship	IEEE Magnetics Society
Starting Page	2496
Ending Page	2499
Page Count	4
File Size	493887
File Format	PDF
ISSN	00189464
Volume Number	44
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic tunneling Magnetic switching Electrical resistance measurement Magnetic field measurement Magnetization Current density Current measurement Current distribution Polarization Computer integrated manufacturing spin transfer Composite free layer current-induced magnetization switching intermediate state magnetic random-access memory (MRAM) magnetic tunnel junction
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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