NDLI: Transport and Magnetic Properties of CPP-GMR Sensor With CoMnSi Heusler Alloy

Content Provider	IEEE Xplore Digital Library
Author	Mizuno, T. Tsuchiya, Y. Machita, T. Hara, S. Miyauchi, D. Shimazawa, K. Chou, T. Noguchi, K. Tagami, K.
Copyright Year	1965
Abstract	We investigated structural and magnetic properties of CoMnSi (CMS) Heusler alloy films and giant magneto-resistance (GMR) ratio of current-perpendicular-to-plane (CPP) GMR sensor elements. The films were deposited with magnetron sputtering method and annealed at 673 K and 773 K. The CMS films were identified as B2 structure by using X-ray diffraction and the magnetization of the films were evaluated as 0.95 T. We fabricated the CPP-GMR sensors varying the composition of the CMS films, Co₄₈ Mn₂₁ Si₃₁ (at. %) as Si-rich CMS and Co₅₁Mn₂₅Si₂₄ (at. %) as CMS-ref, having a FeCo layer between the CMS and Cu spacer. It was found that the element with Si-rich CMS exhibited higher GMR ratio of 9.0% than that with CMS-ref. Our calculations indicate that larger spin polarization of contact region between the CMS film and the FeCo film relates to larger GMR ratio.
Sponsorship	IEEE Magnetics Society
Starting Page	3584
Ending Page	3587
Page Count	4
File Size	281213
File Format	PDF
ISSN	00189464
Volume Number	44
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic properties Magnetic sensors Collision mitigation Semiconductor films Magnetic films Sputtering Annealing X-ray diffraction Magnetization Gas detectors magnetic recording Current-perpendicular-to-plane (CPP) giant magneto-resistance (GMR) Heusler alloys
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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