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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jeong-Heon Park Chando Park Jian-Gang Zhu |
| Copyright Year | 1965 |
| Abstract | Low-resistance magnetic tunnel junctions utilizing perpendicular magnetic anisotropy of Co/Pt multilayer electrodes have been investigated. In these junctions, AlOx tunnel barrier has been prepared by repeated natural oxidation processes. Each natural oxidation process has been optimized by varying the thickness of pre-oxidized Al layer prior to oxidation. The perpendicular magnetic anisotropy of Co/Pt multilayer has been found to be dependent on the degree of oxidation at the interface of tunnel barrier and Co adjacent layer. It has been observed that magnetization of Co/Pt multilayer is tilted when Co layer adjacent to tunnel barrier is relatively thick, which is attributed to the lack of interfacial anisotropy contribution near the interface of Co adjacent layer and AlOx barrier. Interfacial oxidation treated on the monolayer thick Co adjacent layer has enhanced perpendicular magnetic anisotropy of the entire Co/Pt multilayer electrodes, enabling sharp transition between well-defined parallel and anti-parallel states at micro-fabricated perpendicular magnetic tunnel junctions of ~100 Omega ldr mum2 resistance-area product. |
| Sponsorship | IEEE Magnetics Society |
| Starting Page | 2577 |
| Ending Page | 2580 |
| Page Count | 4 |
| File Size | 511675 |
| File Format | |
| ISSN | 00189464 |
| Volume Number | 44 |
| Issue Number | 11 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-11-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Oxidation Perpendicular magnetic anisotropy Magnetic tunneling Magnetic multilayers Electrodes Tunneling magnetoresistance Saturation magnetization USA Councils Anisotropic magnetoresistance Magnetic switching perpendicular magnetic anisotropy Magnetoresistance magnetic tunnel junction natural oxidation |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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