NDLI: Atomic Layer Deposition Al<formula formulatype=inline><tex Notation=TeX>$_{2}$</tex></formula>O<formula formulatype=inline> <tex Notation=TeX>$_{3}$</tex></formula> Films for Permanent Magnet Isolation in TMR Read Heads

Content Provider	IEEE Xplore Digital Library
Author	Kautzky, M.C. Demtchouk, A.V. Yonghua Chen Brown, K.M. McKinlay, S.E. Jianhua Xue
Copyright Year	1965
Abstract	Al₂O₃ films made with atomic layer deposition (ALD) have been developed for use as isolation layers in CPP tunneling magnetoresistive readers. A low-temperature deposition process was developed to permit integration with a self-aligned patterning scheme. The resulting films show excellent thickness uniformity (<2% within-wafer), leakage current density (J_leak<1times10^-18 A/cm²) and breakdown properties (F_bd>9 MV/cm). TEMs of sub-100 nm TMR readers fabricated using these processes show>95% conformality on junction sidewalls, indicating nonselective growth of ALD Al₂O₃ on the various stack and bottom shield surfaces. Permanent magnets with well-controlled junction grain structure and coercivities in excess of 2500 Oe have been deposited with existing processes. FEM modeling shows the effective stabilizing field from the magnets at the junction edge scales inversely with ALD layer thickness, in agreement with device-level free layer stability metrics showing improvements at lower ALD thicknesses. As the conformal ALD layer thickness is easily tuned, this technology provides flexibility in trading off reader amplitude and stability that should support scaling of the abutted TMR design out to 1 Tb/in² and beyond.
Sponsorship	IEEE Magnetics Society
Starting Page	3576
Ending Page	3579
Page Count	4
File Size	860949
File Format	PDF
ISSN	00189464
Volume Number	44
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Atomic layer deposition Permanent magnets Tunneling magnetoresistance Magnetic heads Isolation technology Chemicals Surface topography Electric breakdown Stability Dielectrics tunneling magnetoresistance isolation permanent magnet reader
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Study of a Permanent Shunt Across a TMR Reader With an Ultralow RA Barrier

Impact of microstructure on stability of permanent magnet biased magnetoresistive heads

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