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| Content Provider | ACM Digital Library |
|---|---|
| Author | Arjomand, Mohammad Hoseinzadeh, Morteza Sarbazi-Azad, Hamid |
| Abstract | Although phase change memory with multi-bit storage capability (known as MLC PCM) offers a good combination of high bit-density and non-volatility, its performance is severely impacted by the increased read/write latency. Regarding read operation, access latency increases almost linearly with respect to cell density (the number of bits stored in a cell). Since reads are latency critical, they can seriously impact system performance. This paper alleviates the problem of slow reads in the MLC PCM by exploiting a fundamental property of MLC devices: the Most-Significant Bit (MSB) of MLC cells can be read as fast as SLC cells, while reading the Least-Significant Bits (LSBs) is slower. We propose Striped PCM (SPCM), a memory architecture that leverages this property to keep MLC read latency in the order of SLC's. In order to avoid extra writes onto memory cells as a result of striping memory lines, the proposed design uses a pairing write queue to synchronize write-back requests associated with blocks that are paired in striping mode. Our evaluation shows that our design significantly improves the average memory access latency by more than 30% and IPC by up to 25% (10%, on average), with a slight overhead in memory energy (0.7%) in a 4-core CMP model running memory-intensive benchmarks |
| Starting Page | 277 |
| Ending Page | 288 |
| Page Count | 12 |
| File Format | |
| ISSN | 01635964 |
| DOI | 10.1145/2678373.2665713 |
| Journal | ACM SIGARCH Computer Architecture News (CARN) |
| Volume Number | 42 |
| Issue Number | 3 |
| Language | English |
| Publisher | Association for Computing Machinery (ACM) |
| Publisher Date | 1981-04-01 |
| Publisher Place | New York |
| Access Restriction | One Nation One Subscription (ONOS) |
| Content Type | Text |
| Resource Type | Article |
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