NDLI: Enhanced Thermoelectric Performance of Cu2CdSnSe4 by Mn Doping: Experimental and First Principles Studies

Content Provider	PubMed Central
Author	Liu, F. S. Zheng, J. X. Huang, M. J. He, L. P. Ao, W. Q. Pan, F. Li, J. Q.
Copyright Year	2014
Abstract	Serials of Mn doping by substituting Cd sites on Cu2CdSnSe4 are prepared by the melting method and the spark plasma sintering (SPS) technique to form Cu2Cd1−x Mn x SnSe4. Our experimental and theoretical studies show that the moderate Mn doping by substituting Cd sites is an effective method to improve the thermoelectric performance of Cu2CdSnSe4. The electrical resistivity is decreased by about a factor of 4 at 723 K after replacing Cd with Mn, but the seebeck coefficient decreases only slightly from 356 to 289 μV/K, resulting in the significant increase of the power factor. Although the thermal conductivity increases with the doping content of Mn, the figure of merit (ZT) is still increased from 0.06 (x = 0) to 0.16 (x = 0.10) at 723 K, by a factor of 2.6. To explore the mechanisms behind the experimental results, we have performed an ab initio study on the Mn doping effect and find that the Fermi level of Cu2CdSnSe4 is shifted downward to the valence band, thus improving the hole concentration and enhancing the electrical conductivity at the low level doping content. Optimizing the synthesis process and scaling Cu2Cd1−xMnxSnSe4 to nanoparticles may further improve the ZT value significantly by improving the electrical conductivity and enhancing the phonon scattering to decrease the thermal conductivity.
Related Links	http://dx.doi.org/10.1038/srep05774
Starting Page	5774
File Format	PDF
ISSN	20452322
e-ISSN	20452322
Journal	Scientific Reports
Volume Number	4
Language	English
Publisher	Nature Publishing Group
Publisher Date	2014-07-01
Access Restriction	Open
Rights Holder	Nature Publishing Group
Subject Keyword	Science and technology Research in Higher Education
Content Type	Text
Resource Type	Article
Subject	Multidisciplinary

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

First-principles study of interface doping in ferroelectric junctions

A First Principles study on Boron-doped Graphene decorated by Ni-Ti-Mg atoms for Enhanced Hydrogen Storage Performance

Hf/Sb co-doping induced a high thermoelectric performance of ZrNiSn: First-principles calculation

Enhanced Thermoelectric Performance in Cu-Intercalated BiTeI by Compensation Weakening Induced Mobility Improvement

Enhanced thermoelectric performance of Nb-doped SrTiO3 by nano-inclusion with low thermal conductivity

Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles Study

Preferential Scattering by Interfacial Charged Defects for Enhanced Thermoelectric Performance in Few-layered n-type Bi2Te3

Enhanced Thermoelectric Performance of CoSb(3) Thin Films by Ag and Ti Co-Doping

Strain-Enhanced Thermoelectric Performance in $GeS_{2}$ Monolayer

Enhanced Thermoelectric Performance of Cu2CdSnSe4 by Mn Doping: Experimental and First Principles Studies

Similar Documents

First-principles study of interface doping in ferroelectric junctions

A First Principles study on Boron-doped Graphene decorated by Ni-Ti-Mg atoms for Enhanced Hydrogen Storage Performance

Hf/Sb co-doping induced a high thermoelectric performance of ZrNiSn: First-principles calculation

Enhanced Thermoelectric Performance in Cu-Intercalated BiTeI by Compensation Weakening Induced Mobility Improvement

Enhanced thermoelectric performance of Nb-doped SrTiO3 by nano-inclusion with low thermal conductivity

Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles Study

Preferential Scattering by Interfacial Charged Defects for Enhanced Thermoelectric Performance in Few-layered n-type Bi2Te3

Enhanced Thermoelectric Performance of CoSb(3) Thin Films by Ag and Ti Co-Doping

Strain-Enhanced Thermoelectric Performance in $GeS_{2}$ Monolayer

Enhanced Thermoelectric Performance of Cu2CdSnSe4 by Mn Doping: Experimental and First Principles Studies