NDLI: Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering

Content Provider	PubMed Central
Author	Shon, Jeong Woo Ohta, Jitsuo Ueno, Kohei Kobayashi, Atsushi Fujioka, Hiroshi
Copyright Year	2014
Abstract	InGaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient light sources capable of replacing incandescent bulbs. However, applications of InGaN LEDs are limited to small devices because their fabrication process involves expensive epitaxial growth of InGaN by metalorganic vapor phase epitaxy on single-crystal wafers. If we can utilize a low-cost epitaxial growth process, such as sputtering on large-area substrates, we can fabricate large-area InGaN light-emitting displays. Here, we report the growth of GaN (0001) and InGaN (0001) films on amorphous SiO2 by pulsed sputtering deposition. We found that using multilayer graphene buffer layers allows the growth of highly c-axis-oriented GaN films even on amorphous substrates. We fabricated red, green, and blue InGaN LEDs and confirmed their successful operation. This successful fabrication of full-color InGaN LEDs on amorphous substrates by sputtering indicates that the technique is quite promising for future large-area light-emitting displays on amorphous substrates.
Related Links	http://dx.doi.org/10.1038/srep05325
Starting Page	5325
File Format	PDF
ISSN	20452322
e-ISSN	20452322
Journal	Scientific Reports
Volume Number	4
Language	English
Publisher	Nature Publishing Group
Publisher Date	2014-06-01
Access Restriction	Open
Rights Holder	Nature Publishing Group
Subject Keyword	Science and technology Research in Higher Education
Content Type	Text
Resource Type	Article
Subject	Multidisciplinary

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