NDLI: Filling through-silicon vias with conductive ferromagnetic silver-iron composite

Content Provider	IEEE Xplore Digital Library
Author	Chung-Han Lu Wang, K.
Copyright Year	2014
Description	Author affiliation: Nat. Changhua Univ. of Educ., Changhua, Taiwan (Chung-Han Lu; Wang, K.)
Abstract	This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as $5×10^{6}$ V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of $6×10^{7}$ $A/m^{2}.$ The leakage current is $2×10^{-6}$ A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.
Starting Page	366
Ending Page	369
File Size	1063068
Page Count	4
File Format	PDF
ISBN	9781479947263
DOI	10.1109/NEMS.2014.6908828
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-04-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Through-silicon vias CMOS integrated circuits Silver Iron Silicon Conductivity Resistance ferromagnetic conductive composite through silicon via electrical sintering
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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