NDLI: A SOI sandwich differential capacitance accelerometer with low-stress package

Content Provider	IEEE Xplore Digital Library
Author	Yangxi Zhang Chengchen Gao Fanrui Meng Yilong Hao
Copyright Year	2014
Description	Author affiliation: Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Beijing, China (Yangxi Zhang; Chengchen Gao; Fanrui Meng; Yilong Hao)
Abstract	Thermal stress and device bending have significant effect on the performance of MEMS sensors. In this paper, a MEMS sandwich differential capacitance accelerometer with low-stress package is presented. The accelerometer is based on a thin silicon middle layer which has been bonded with two glass electrode plates. A metal hermetic package case is used for reliability and noise immunity. The purpose is to simplify manufacturing process and reduce thermal influence. The methods of reducing thermal stress and deflection were evaluated. The thickness of glass electrode plates was optimized for low-stress. A silicon multi-point supporting frame which could reduce thermal stress between glass electrode plate and metal case was designed and simulated. The stress model in this study provides useful information for sandwich structures. Test results in actual device show it has the sensitivity of 0.1124V/g and 0.435% nonlinearity error in test range of 0~50g, 0.02%/°C zero temperature drift without temperature compensation.
Starting Page	341
Ending Page	345
File Size	1341080
Page Count	5
File Format	PDF
ISBN	9781479947263
DOI	10.1109/NEMS.2014.6908822
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-04-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrodes Accelerometers Stress Glass Silicon Thermal stresses Sensors Low Stress Package Differential Capacitance Accelerometer
Content Type	Text
Resource Type	Article

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