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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Al-Mumen, H. Lixin Dong Wen Li |
| Copyright Year | 2014 |
| Description | Author affiliation: Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI, USA (Al-Mumen, H.; Lixin Dong; Wen Li) |
| Abstract | N-type doping of graphene with long-term air stability represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method that uses SU-8 photoresist as a doping and encapsulating material to enable highly air-stable n-type semiconducting properties of graphene. The SU-8 resist simultaneously serves as an effective electron dopant, a dielectric medium, and an excellent encapsulating layer. The air-stable n-type characteristics of the as-doped graphene were verified by Raman spectra and transport properties. The SU-8 doping has minimum damage to the hexagonal lattice of graphene and can be reversed by removing the uncrosslinked SU-8 resist. |
| Starting Page | 72 |
| Ending Page | 76 |
| File Size | 605683 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781479947263 |
| DOI | 10.1109/NEMS.2014.6908762 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-04-13 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Graphene Doping Resists Logic gates Transistors Thermal stability Lattices doping graphene transistor nanomesh |
| Content Type | Text |
| Resource Type | Article |
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