NDLI: Large scale and high yield assembly of SWNTs by sacrificial electrode method

Content Provider	IEEE Xplore Digital Library
Author	Tao Yu Mengge Li Yu Xiang Jinwen Zhang
Copyright Year	2014
Description	Author affiliation: Inst. of Microelectron., Peking Univ., Beijing, China (Tao Yu; Mengge Li; Yu Xiang; Jinwen Zhang)
Abstract	This paper presented a novel sacrificial electrode dielectrophoresis method which was able to fabricate a large amount of totally discrete SWNT devices on a single chip synchronously. The discrete devices included a pair of W/Au opposed electrodes and SWNT bundles that were assembled between electrodes by DEP. We used Al lines to connect the two electrodes of all devices to two large Al pads. AC DEP bias were applied on Al pads and the SWNTs were self-assembled at the same time. Then Al was etched so that W/Au electrodes of the same polarity were disconnected and all devices were discrete electrically. The density of SWNT devices was 3 times larger than before. The electrical measurement showed that ohmic contact was formed between the assembled SWNTs and the electrodes. Our sacrificial electrode DEP method made it more flexible to achieve SWNT devices in large scale.
Starting Page	582
Ending Page	585
File Size	1258799
Page Count	4
File Format	PDF
ISBN	9781479947263
DOI	10.1109/NEMS.2014.6908879
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-04-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrodes Assembly Gold Electric potential Carbon nanotubes Logic gates Fingers
Content Type	Text
Resource Type	Article

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