NDLI: Fabrication of through-silicon vias (TSV) by nickel electroplating in supercritical CO

Content Provider	IEEE Xplore Digital Library
Author	Ho-Chiao Chuang Wei-Hong Lai Ai-Ho Liao Chih-Chung Huang Chih-Kuang Yeh
Copyright Year	2014
Description	Author affiliation: Grad. Inst. of Biomed. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan (Ai-Ho Liao) \|\| Dept. of Biomed. Eng. & Environ. Sci., Nat. Tsing-Hua Univ., Hsinchu, Taiwan (Chih-Kuang Yeh) \|\| Dept. of Mech. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan (Ho-Chiao Chuang; Wei-Hong Lai) \|\| Dept. of Biomed. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan (Chih-Chung Huang)
Abstract	3D integrated circuit (IC) structure could provide larger patterning areas by stacking the multi-planar chips, in which the electrical signals can be vertically conducted via through-silicon vias (TSVs). Thus, its advantages are lowered costs and reduced packaging space, size and weight. In this study, the TSVs are fabricated and characterized. Four through holes with a diameter of 70 μm on a silicon wafer are filled by nickel electroplating in supercritical $CO_{2}.$ The chip is cut for observation and examination of the cross-sectional view of the TSVs. The average electrical resistance across the TSVs was measured 0.01Ω. Then the fabricated TSVs can be applied a maximum current of 10 Amps continuously without burnout.
Starting Page	108
Ending Page	112
File Size	630229
Page Count	5
File Format	PDF
ISBN	9781479947263
DOI	10.1109/NEMS.2014.6908770
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-04-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Through-silicon vias Nickel Carbon dioxide Resistance Silicon Electrical resistance measurement nickel electroplating TSV supercritical carbon dioxide
Content Type	Text
Resource Type	Article

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