NDLI: Graphene junction field-effect transistor

Content Provider	IEEE Xplore Digital Library
Author	Tzu-Min Ou Borsa, T. Van Zeghbroeck, B.
Copyright Year	2015
Description	Author affiliation: Dept. of Electr., Comput., & Energy Eng., Univ. of Colorado - Boulder, Boulder, CO, USA (Tzu-Min Ou; Borsa, T.; Van Zeghbroeck, B.)
Abstract	Summary form only given. Graphene is known for its high carrier mobility and high saturation velocity . The majority of graphene transistors in the literature-including MOSFETs, barristors, and tunneling FETs-have a gate separated from the channel by a conventional or high-K dielectric layer. In this paper we demonstrate for the first time a lateral graphene FET gated by a graphene/semiconductor heterojunction. The device consists of a p-type graphene channel and an n-type semiconductor gate. Since no metal/dielectric-stacked gate is used, the device is referred to as graphene junction FET (G-JFET). Such a device is of interest as an alternate to G-MOSFETs, or as a back gate for G-MOSFETs with the feature that the device's Dirac voltage $(V_{Dirac})$ can be tuned by the doping density of semiconductor gate. This G-JFET device demonstrates for the first time the feasibility of using a graphene/n-semiconductor Schottky junction as the gate mechanism to control the conductivity of a graphene channel. The Schottky-junction back gate of a G-JFET also provides an additional degree of freedom to tune the $V_{Dirac}$ of each individual transistor by doping specific regions underneath the graphene channel.
Sponsorship	IEEE Electron Devices Soc.
Starting Page	139
Ending Page	140
File Size	1527600
Page Count	2
File Format	PDF
ISBN	9781467381345
e-ISBN	9781467381352
DOI	10.1109/DRC.2015.7175594
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Doping Gold Dielectrics Graphene Transistors High K dielectric materials
Content Type	Text
Resource Type	Article

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