NDLI: Product Burn-in Stress Impacts on SRAM Array Performance

Content Provider	IEEE Xplore Digital Library
Author	Li Wang Qiuyi Ye Wong, R. Liehr, M.
Copyright Year	2007
Description	Author affiliation: IBM Semicond. Res. & Dev. Center, East Fishkill, NY (Li Wang; Qiuyi Ye; Wong, R.; Liehr, M.)
Abstract	Product burn-in stresses are commonly performed on SRAM array to accelerate transistor failure mechanism and screen out weak SRAM cells. For sub-100 nm technology, the possible impacts from burn-in stress are negative bias temperature instability (NBTI) (Schroder and Babcock, 2003) on PFET and hot carrier effect (HCE) on NFET. Recently several groups (Muller et al., 2004 and LaRosa et al., 2006) reported the studies of NBTI impact on SRAM array performance, either using circuit simulation (Muller et al., 2004) or based on test results of discrete SRAM cell (LaRosa et al., 2006). Our study, for the first time, is directly based on the product results from burn-in stress on SRAM array. With device reliability models and circuit simulation, we analyzed the shift of key product parameters: SRAM array stand-by current (Iddq) and minimum array operation voltage (Vcsmin). Our studies show that PFET NBTI is the dominant factor that is responsible for the degradation of SRAM array stability, and its impact on Vcsmin is predictable by Iddq data and modeling.
Starting Page	666
Ending Page	667
File Size	248715
Page Count	2
File Format	PDF
ISBN	1424409187
DOI	10.1109/RELPHY.2007.370003
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-04-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Random access memory Niobium compounds Titanium compounds Circuit simulation Circuit testing Acceleration Failure analysis Negative bias temperature instability Hot carrier effects
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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