NDLI: Dielectric Breakdown in High-K Gate Dielectrics - Mechanism and Lifetime Assessment

Content Provider	IEEE Xplore Digital Library
Author	Okada, K. Ota, H. Nabatame, T. Toriumi, A.
Copyright Year	2007
Description	Author affiliation: MIRAI, ASET, Ibaraki (Okada, K.)
Abstract	Dielectric breakdown in high-k gate dielectrics is discussed from the viewpoints of its mechanism and accurate TDDB lifetime assessment. As for the dielectric breakdown mechanism, we have proposed the generated subordinate carrier injection (GSCI) model. The GSCI model considers that injected subordinate carriers degrade the dielectrics and that breakdown occurs when their number reaches a threshold value. Due to the existence of the trap-assisted conduction current component which does not contribute to breakdown in the measured subordinate carrier current, accurate decomposition into each current component is important for precise lifetime prediction. For this purpose, we have proposed a universal relationship between the voltage acceleration factory of lifetime and the stress gate voltage, the so-called 7-universality. We show that the GSCI model combined with the 7-universality makes possible the precise prediction of the TDDB lifetime. This paper also discusses a new definition of device lifetime limited by the time-dependent device-level leakage current due to multiple soft breakdowns in EOT-scaled regime. Modeling of the statistics of multiple soft breakdowns is proposed for the prediction of the device lifetime defined by this criterion.
Starting Page	36
Ending Page	43
File Size	8476090
Page Count	8
File Format	PDF
ISBN	1424409187
DOI	10.1109/RELPHY.2007.369865
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-04-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectric breakdown Electric breakdown Voltage Predictive models Degradation Current measurement Dielectric measurements Acceleration Production facilities Stress HfSiON high-k dielectrics reliability breakdown soft breakdown hard breakdown stress-induced leakage current SILC TDDB HfAlO
Content Type	Text
Resource Type	Article

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