NDLI: Development and Optimization of Re-Oxidized Tunnel Oxide with Nitrogen Incorporation for the Flash Memory Applications

Content Provider	IEEE Xplore Digital Library
Author	Jung-Geun Jee WookHyun Kwon Woong Lee Jung-Hyun Park Hyeong-Ki Kim Ho-Min Son Won-Jun Chang Jae-Jong Han Yong-Woo Hyung Hyeon-Deok Lee
Copyright Year	2007
Description	Author affiliation: Semicond. R & D center, Samsung Electron. Co., Ltd., Gyeonggi-Do (Jung-Geun Jee; WookHyun Kwon; Woong Lee; Jung-Hyun Park; Hyeong-Ki Kim; Ho-Min Son; Won-Jun Chang; Jae-Jong Han; Yong-Woo Hyung; Hyeon-Deok Lee)
Abstract	The reliability properties of NOR flash memory with 65nm node being developed in Samsung electronics are greatly improved by using the newly proposed re-oxidized tunnel oxide. Especially, by optimizing the process variables such as the re-oxidation thickness/time, the partial pressure of NO during annealing, and the kinds of re-oxidizing materials, the Vth shifts post cycling and after post-cycling bake were decreased to the level of 28% and 42% of conventional NO annealed tunnel oxide, respectively.
Starting Page	184
Ending Page	189
File Size	404943
Page Count	6
File Format	PDF
ISBN	1424409187
DOI	10.1109/RELPHY.2007.369890
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-04-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nitrogen Flash memory Annealing Oxidation Hydrogen Degradation Threshold voltage Thermal stresses Bonding Research and development
Content Type	Text
Resource Type	Article

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Development and Optimization of Re-Oxidized Tunnel Oxide with Nitrogen Incorporation for the Flash Memory Applications