NDLI: Theoretical Analysis of Vacancy Transport Combined with Electromigration and Stress Induced Voiding

Content Provider	IEEE Xplore Digital Library
Author	Nemoto, T. Yokobori, A.T. Murakawa, T.
Copyright Year	2007
Description	Author affiliation: Tokyo Electron Ltd. (Nemoto, T.)
Abstract	Electromigration (EM) and stress-induced voiding have become significant in recent LSI interconnections due to the increase in current density and residual stress (Nemoto et al., 2006). Many works have been carried out to clarify the relationship between EM and residual stress (Gungor et al., 1998). The present authors have reported the numerical analysis of vacancy transport based upon the mass balance equation (Nemoto, 2006). This paper concludes that the behavior of vacancy transport by EM is influenced by residual stress. In this paper, an equation for vacancy transport is proposed to include the effect of residual stress. A computer-aided simulation and an in-situ observation test are conducted to discuss the quantitative relationship between current density and residual stress.
Starting Page	634
Ending Page	635
File Size	620144
Page Count	2
File Format	PDF
ISBN	1424409187
DOI	10.1109/RELPHY.2007.369987
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-04-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electromigration Residual stresses Current density Numerical analysis Equations Analytical models Cathodes Electrons Large scale integration Computational modeling in-situ observation electromigration residual stress numerical analysis
Content Type	Text
Resource Type	Article

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