NDLI: Reconsideration of Hydrogen-Related Degradation Mechanism in Gate Oxide

Content Provider	IEEE Xplore Digital Library
Author	Mitani, Y. Yamaguchi, T. Satake, H. Toriumi, A.
Copyright Year	2007
Description	Author affiliation: Adv. LSI Technol. Lab., Toshiba Corp., Yokohama (Mitani, Y.)
Abstract	In this paper, we have investigated the correlation between released hydrogen from $Si/SiO_{2}$ interface and trap creation in bulk $SiO_{2}.$ The key point of these experiments is that hydrogen release from the interface is performed without trap creation in bulk $SiO_{2}$ by injected hot carriers. Therefore, negative bias temperature (NBT) stress or substrate hot electron (SHE) stress was utilized to release hydrogen from $Si/SiO_{2}$ interface. As a result, SILC is clearly observed after low voltage NBT stress in pMOSFETs. In this stress condition, impact ionization at anode interface due to injected hot electrons was negligible. In the same way, SILC is also observed by applying SHE stress in nMOSFETs. In addition, the SILC is suppressed by decreasing released hydrogen using fluorine incorporation in both stress conditions. From these results, we inferred that the released hydrogen from $Si/SiO_{2}$ interface strongly correlates to the trap creation in gate oxides
Starting Page	226
Ending Page	231
File Size	676277
Page Count	6
File Format	PDF
ISBN	1424409187
DOI	10.1109/RELPHY.2007.369896
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-04-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Stress Hydrogen Electron traps MOSFETs Hot carriers Temperature Substrate hot electron injection Low voltage Impact ionization Interface states Gate oxide Reliability NBTI SILC Fluorine Trap creation
Content Type	Text
Resource Type	Article

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