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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ki-Tae Park Jin-man Han Daehan Kim Sangwan Nam Kihwan Choi Min-Su Kim Pansuk Kwak Doosub Lee Yoon-He Choi Kyung-Min Kang Myung-Hoon Choi Dong-Hun Kwak Hyun-wook Park Sang-won Shim Hyun-Jun Yoon Doohyun Kim Sang-won Park Kangbin Lee Kuihan Ko Dong-Kyo Shim Yang-Lo Ahn Jeunghwan Park Jinho Ryu Donghyun Kim Kyungwa Yun Joonsoo Kwon Seunghoon Shin Dongkyu Youn Won-Tae Kim Taehyun Kim Sung-Jun Kim Sungwhan Seo Hyung-Gon Kim Dae-Seok Byeon Hyang-Ja Yang Moosung Kim Myong-Seok Kim Jinseon Yeon Jaehoon Jang Han-Soo Kim Woonkyung Lee Duheon Song Sungsoo Lee Kye-Hyun Kyung Jeong-Hyuk Choi |
| Copyright Year | 2014 |
| Description | Author affiliation: Samsung Semicond., Hwasung, South Korea (Ki-Tae Park; Jin-man Han; Daehan Kim; Sangwan Nam; Kihwan Choi; Min-Su Kim; Pansuk Kwak; Doosub Lee; Yoon-He Choi; Kyung-Min Kang; Myung-Hoon Choi; Dong-Hun Kwak; Hyun-wook Park; Sang-won Shim; Hyun-Jun Yoon; Doohyun Kim; Sang-won Park; Kangbin Lee; Kuihan Ko; Dong-Kyo Shim; Yang-Lo Ahn; Jeunghwan Park; Jinho Ryu; Donghyun Kim; Kyungwa Yun; Joonsoo Kwon; Seunghoon Shin; Dongkyu Youn; Won-Tae Kim; Taehyun Kim; Sung-Jun Kim; Sungwhan Seo; Hyung-Gon Kim; Dae-Seok Byeon; Hyang-Ja Yang; Moosung Kim; Myong-Seok Kim; Jinseon Yeon; Jaehoon Jang; Han-Soo Kim; Woonkyung Lee; Duheon Song; Sungsoo Lee; Kye-Hyun Kyung; Jeong-Hyuk Choi) |
| Abstract | In the past few years, various 3D NAND Flash memories have been demonstrated, from device feasibility to chip implementation, to overcome scaling challenges in conventional planar NAND Flash [1-3]. The difficulties include shrinking the NAND cell and increasing manufacturing costs due to quadruple patterning and extreme ultraviolet lithography, motivating the development of the next-generation node beyond 16nm-class NAND Flash [4]. In this paper, as a new 3D memory device with lower manufacturing cost and superior device scalability, we present a true 3D 128Gb 2b/cell vertical-NAND (V-NAND) Flash. The chip accomplishes 50MB/s write throughput with 3K endurance for typical embedded applications such as mobile and personal computer. Also, extended endurance of 35K is achieved with 33MB/s of write throughput for data center and enterprise SSD applications. |
| Starting Page | 334 |
| Ending Page | 335 |
| File Size | 826189 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781479909186 |
| ISSN | 01936530 |
| e-ISBN | 9781479909209 |
| DOI | 10.1109/ISSCC.2014.6757458 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-02-09 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Three-dimensional displays Flash memories Arrays Microprocessors Couplings Throughput |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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