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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Taejoong Song Woojin Rim Jonghoon Jung Giyong Yang Jaeho Park Sunghyun Park Kang-Hyun Baek Sanghoon Baek Sang-Kyu Oh Jinsuk Jung Sungbong Kim Gyuhong Kim Jintae Kim Youngkeun Lee Kee Sup Kim Sang-Pil Sim Jong Shik Yoon Kyu-Myung Choi |
| Copyright Year | 2014 |
| Description | Author affiliation: Samsung Electron., Yongin, South Korea (Taejoong Song; Woojin Rim; Jonghoon Jung; Giyong Yang; Jaeho Park; Sunghyun Park; Kang-Hyun Baek; Sanghoon Baek; Sang-Kyu Oh; Jinsuk Jung; Sungbong Kim; Gyuhong Kim; Jintae Kim; Youngkeun Lee; Kee Sup Kim; Sang-Pil Sim; Jong Shik Yoon; Kyu-Myung Choi) |
| Abstract | With the explosive growth of battery-operated portable devices, the demand for low power and small size has been increasing for system-on-a-chip (SoC). The FinFET is considered as one of the most promising technologies for future low-power mobile applications because of its good scaling ability, high on-current, better SCE and subthreshold slope, and small leakage current [1]. As a key approach for low-power, supply-voltage $(V_{DD})$ scaling has been widely used in SoC design. However, SRAM is the limiting factor of voltage-scaling, since all SRAM functions of read, write, and hold-stability are highly influenced by increased variations at low $V_{DD},$ resulting in lower yield. In addition, the width-quantization property of FinFET device reduces the design window for transistor sizing, and increases the failure probability due to the un-optimized bitcell sizing [1]. In order to overcome the bitcell challenges to high yield, peripheral-assist techniques are required. In this paper, we present 14nm FinFET-based 128Mb 6T SRAM chips featuring $low-V_{MIN}$ with newly developed assist techniques. |
| Starting Page | 232 |
| Ending Page | 233 |
| File Size | 1828732 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781479909186 |
| ISSN | 01936530 |
| e-ISBN | 9781479909209 |
| DOI | 10.1109/ISSCC.2014.6757413 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-02-09 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | High definition video FinFETs CMOS integrated circuits SRAM chips Noise Silicon |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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