NDLI: A 45nm 1Gb 1.8V phase-change memory

Content Provider	IEEE Xplore Digital Library
Author	Villa, C. Mills, D. Barkley, G. Giduturi, H. Schippers, S. Vimercati, D.
Copyright Year	2010
Description	Author affiliation: Numonyx, Folsom, CA, USA (Mills, D.; Barkley, G.; Giduturi, H.) \|\| Numonyx, Agrate Brianza, Italy (Villa, C.; Schippers, S.; Vimercati, D.)
Abstract	Floating-gate Flash memories have been able so far to satisfy the market requirements, especially for the portable equipments, and to be the mainstream non-volatile memory (NVM) technology [1]. Projecting into the next decade, though, there are several limitations that must be faced to further scale the floating-gate concept. The increasing complexity of floating gate scaling has left room for the investigation of alternative NVM concepts. Phase-change memory (PCM) technology is the only one of the proposed alternative technologies that is demonstrating the capability to enter in the broad NVM market and to become mainstream in the next decade [2]. PCM, based on the property of chalcogenide materials that have two stable states, amorphous and crystalline, with different electrical resistivity values, provides a new set of features interesting for novel applications, combining features of NVM and DRAM and being at the same time a sustaining and a disruptive technology. PCM can be exploited by the memory system resulting from the convergence of consumer, computer and communication electronics. In this paper, we present a read-while-write 45nm [3] 1Gb non-volatile memory based on phase-change Ge (GST) alloy. The device implements 3 specifications that are compatible with existing NOR products for embedded and wireless market with no mux, address/data mux (ADMux) and address/address/data mux (AADMux) interfaces. An extended command set that allows bit-alterability is also included.
Starting Page	270
Ending Page	271
File Size	227871
Page Count	2
File Format	PDF
ISBN	9781424460335
ISSN	01936530
e-ISBN	9781424460366
DOI	10.1109/ISSCC.2010.5433916
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-02-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Phase change memory Nonvolatile memory Voltage Pulse amplifiers Phase change materials Tiles Temperature sensors Fuses Resistors Shape control
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

A Phase Change Memory Compact Model for Multilevel Applications

A 0.1/spl mu/m 1.8V 256Mb 66MHz Synchronous Burst PRAM

A new phase in nonvolatile memory?

A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW

An 8Mb demonstrator for high-density 1.8V Phase-Change Memories

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A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

Analysis of phase distribution in phase-change nonvolatile memories

Electronic switching effect and phase-change transition in chalcogenide materials

A 45nm 1Gb 1.8V phase-change memory

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