NDLI: A 105dB-gain 500MHz-bandwidth 0.1Ω-output-impedance amplifier for an amplitude modulator in 65nm CMOS

Content Provider	IEEE Xplore Digital Library
Author	Chul Kim Chang-seok Chae Young-sub Yuk Yi-Gyeong Kim Jong-Kee Kwon Gyu-Hyeong Cho
Copyright Year	2010
Description	Author affiliation: KAIST, Daejeon, Korea (Chul Kim; Chang-seok Chae; Young-sub Yuk; Gyu-Hyeong Cho) \|\| Electronics and Telecommunications Research Institute, Daejeon, Korea (Yi-Gyeong Kim; Jong-Kee Kwon)
Abstract	Polar modulation, where a constant-amplitude phase signal is amplified by an efficient switched-mode power amplifier (PA) and an envelope signal is modulated at the drain of the PA, has been proven to improve efficiency and linearity of the PA system. However, the amplitude modulator (AM) used in such modulation systems must have wide bandwidth, low switching ripple and high efficiency. Although several AM structures have been reported the hybrid switching amplitude modulator (HSAM) shows excellent performance [1–3]. The HSAM consists of a linear amplifier as a voltage source and a switching amplifier as a dependant current source. The linear amplifier using voltage feedback defines output voltage with high frequency information in a bandwidth-expanded envelope signal and the switching amplifier using current feedback drives almost all the current to develop output voltage with the help of a current sensing circuit. If the current sensing circuit does not work well, it makes an offset to the switching amplifier and results in additional power consumption of the linear amplifier [2]. To meet a stringent spectral mask, low output impedance of the linear amplifier is needed [1]. In conclusion, wide bandwidth and low output impedance of the linear amplifier, and accurate current sensing are critical points in the design of the HSAM.
Starting Page	88
Ending Page	89
File Size	2431691
Page Count	2
File Format	PDF
ISBN	9781424460335
ISSN	01936530
e-ISBN	9781424460366
DOI	10.1109/ISSCC.2010.5434037
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-02-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Amplitude modulation Bandwidth Voltage Impedance Circuits Mirrors Power amplifiers Energy consumption Negative feedback MOSFETs
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
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9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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