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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Sangbeom Kang WooYeong Cho Beak-Hyung Cho Kwang-Jin Lee Chang-Soo Lee Hyung-Rock Oh Byung-Gil Choi Qi Wang Hye-Jin Kim Mu-Hui Park Yu-Hwan Ro Suyeon Kim Du-Eung Kim Kang-Sik Cho Choong-Duk Ha Youngran Kim Ki-Sung Kim Choong-Ryeol Hwang Choong-Keun Kwak Hyun-Geun Byun Yun Sueng Shin |
| Copyright Year | 2006 |
| Description | Author affiliation: Samsung, Hwasung (Sangbeom Kang; WooYeong Cho; Beak-Hyung Cho; Kwang-Jin Lee; Chang-Soo Lee; Hyung-Rock Oh; Byung-Gil Choi; Qi Wang; Hye-Jin Kim; Mu-Hui Park; Yu-Hwan Ro; Suyeon Kim; Du-Eung Kim; Kang-Sik Cho; Choong-Duk Ha; Youngran Kim; Ki-Sung Kim; Choong-Ryeol Hwang; Choong-Keun Kwak; Hyun-Geun Byun; Yun Sueng Shin) |
| Abstract | A 256Mb PRAM featuring synchronous burst read operation is developed. Using a charge-pump system, write performance is characterized at 1.8V supply. Measured initial read access time and burst-read access time are 62ns and 10ns, respectively. The maximum write throughput is 3.3MB/S |
| Starting Page | 487 |
| Ending Page | 496 |
| File Size | 1455045 |
| Page Count | 10 |
| File Format | |
| ISBN | 1424400791 |
| ISSN | 01936530 |
| DOI | 10.1109/ISSCC.2006.1696081 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-02-06 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Phase change random access memory Charge pumps Voltage Nonvolatile memory Flash memory CMOS technology Current supplies Clocks Space vector pulse width modulation Scalability |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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